Impact of gate oxide thickness and channel length on junction-less poly-si TFTs

Cheng I. Lin; Horng Chih Lin; Tiao Yuan Huang

doi:10.1002/j.2168-0159.2012.tb05945.x

Impact of gate oxide thickness and channel length on junction-less poly-si TFTs

Cheng I. Lin, Horng Chih Lin, Tiao Yuan Huang

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Poly-Si junctionless (JL) TFTs with various structural parameters were characterized. Owing to the presence of abundant carriers in the channel and elimination of junctions, dramatically increased current drive is achieved with the JL device. Improved control over short-channel effects and characteristics fluctuation is also achieved with a thinner gate oxide.

Original language	English
Pages (from-to)	943-946
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	43
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2012.tb05945.x
State	Published - 1 Jan 2012
Event	49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States Duration: 3 Jun 2012 → 8 Jun 2012

Access to Document

10.1002/j.2168-0159.2012.tb05945.x

Fingerprint Dive into the research topics of 'Impact of gate oxide thickness and channel length on junction-less poly-si TFTs'. Together they form a unique fingerprint.

Cite this

@article{f86ca179fb574e4cb5161059bd51c2ae,

title = "Impact of gate oxide thickness and channel length on junction-less poly-si TFTs",

abstract = "Poly-Si junctionless (JL) TFTs with various structural parameters were characterized. Owing to the presence of abundant carriers in the channel and elimination of junctions, dramatically increased current drive is achieved with the JL device. Improved control over short-channel effects and characteristics fluctuation is also achieved with a thinner gate oxide.",

author = "Lin, {Cheng I.} and Lin, {Horng Chih} and Huang, {Tiao Yuan}",

year = "2012",

month = jan,

day = "1",

doi = "10.1002/j.2168-0159.2012.tb05945.x",

language = "English",

volume = "43",

pages = "943--946",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "1",

note = "null ; Conference date: 03-06-2012 Through 08-06-2012",

}

TY - JOUR

T1 - Impact of gate oxide thickness and channel length on junction-less poly-si TFTs

AU - Lin, Cheng I.

AU - Lin, Horng Chih

AU - Huang, Tiao Yuan

PY - 2012/1/1

Y1 - 2012/1/1

N2 - Poly-Si junctionless (JL) TFTs with various structural parameters were characterized. Owing to the presence of abundant carriers in the channel and elimination of junctions, dramatically increased current drive is achieved with the JL device. Improved control over short-channel effects and characteristics fluctuation is also achieved with a thinner gate oxide.

AB - Poly-Si junctionless (JL) TFTs with various structural parameters were characterized. Owing to the presence of abundant carriers in the channel and elimination of junctions, dramatically increased current drive is achieved with the JL device. Improved control over short-channel effects and characteristics fluctuation is also achieved with a thinner gate oxide.

UR - http://www.scopus.com/inward/record.url?scp=85075684504&partnerID=8YFLogxK

U2 - 10.1002/j.2168-0159.2012.tb05945.x

DO - 10.1002/j.2168-0159.2012.tb05945.x

M3 - Conference article

AN - SCOPUS:85075684504

VL - 43

SP - 943

EP - 946

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

SN - 0097-966X

IS - 1

Y2 - 3 June 2012 through 8 June 2012

ER -