Impact of gate oxide thickness and channel length on junction-less poly-si TFTs

Cheng I. Lin, Horng Chih Lin, Tiao Yuan Huang

Research output: Contribution to journalConference article

Abstract

Poly-Si junctionless (JL) TFTs with various structural parameters were characterized. Owing to the presence of abundant carriers in the channel and elimination of junctions, dramatically increased current drive is achieved with the JL device. Improved control over short-channel effects and characteristics fluctuation is also achieved with a thinner gate oxide.

Original languageEnglish
Pages (from-to)943-946
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume43
Issue number1
DOIs
StatePublished - 1 Jan 2012
Event49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States
Duration: 3 Jun 20128 Jun 2012

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