Poly-Si junctionless (JL) TFTs with various structural parameters were characterized. Owing to the presence of abundant carriers in the channel and elimination of junctions, dramatically increased current drive is achieved with the JL device. Improved control over short-channel effects and characteristics fluctuation is also achieved with a thinner gate oxide.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 1 Jan 2012|
|Event||49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States|
Duration: 3 Jun 2012 → 8 Jun 2012