Abstract
In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (similar to 800ns) is more than three orders of magnitude faster than that of control trapping type.
Original language | English |
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Title of host publication | 1st IEEE Electron Devices Technology and Manufacturing Conference (EDTM) |
Pages | 224-225 |
Number of pages | 2 |
DOIs | |
State | Published - 2017 |