Impact of Ferroelectric Domain Switching in Nonvolatile Charge-Trapping Memory

Chia Chi Fan; Yu Chien Chiu; Chien Liu; Guan Lin Liou; Wen-Wei Lai; Yi Ru Chen; Chun-Hu Cheng; Chun-Yen Chang

doi:10.1109/EDTM.2017.7947573

Impact of Ferroelectric Domain Switching in Nonvolatile Charge-Trapping Memory

Chia Chi Fan, Yu Chien Chiu, Chien Liu, Guan Lin Liou, Wen-Wei Lai, Yi Ru Chen, Chun-Hu Cheng, Chun-Yen Chang

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (similar to 800ns) is more than three orders of magnitude faster than that of control trapping type.

Original language	English
Title of host publication	1st IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
Pages	224-225
Number of pages	2
DOIs	https://doi.org/10.1109/EDTM.2017.7947573
State	Published - 2017

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title = "Impact of Ferroelectric Domain Switching in Nonvolatile Charge-Trapping Memory",

abstract = "In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (similar to 800ns) is more than three orders of magnitude faster than that of control trapping type.",

author = "Fan, {Chia Chi} and Chiu, {Yu Chien} and Chien Liu and Liou, {Guan Lin} and Wen-Wei Lai and Chen, {Yi Ru} and Chun-Hu Cheng and Chun-Yen Chang",

year = "2017",

doi = "10.1109/EDTM.2017.7947573",

language = "English",

isbn = "978-1-5090-4660-7",

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Impact of Ferroelectric Domain Switching in Nonvolatile Charge-Trapping Memory. / Fan, Chia Chi; Chiu, Yu Chien; Liu, Chien; Liou, Guan Lin; Lai, Wen-Wei; Chen, Yi Ru; Cheng, Chun-Hu; Chang, Chun-Yen.

1st IEEE Electron Devices Technology and Manufacturing Conference (EDTM). 2017. p. 224-225.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Impact of Ferroelectric Domain Switching in Nonvolatile Charge-Trapping Memory

AU - Fan, Chia Chi

AU - Chiu, Yu Chien

AU - Liu, Chien

AU - Liou, Guan Lin

AU - Lai, Wen-Wei

AU - Chen, Yi Ru

AU - Cheng, Chun-Hu

AU - Chang, Chun-Yen

PY - 2017

Y1 - 2017

N2 - In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (similar to 800ns) is more than three orders of magnitude faster than that of control trapping type.

AB - In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (similar to 800ns) is more than three orders of magnitude faster than that of control trapping type.

U2 - 10.1109/EDTM.2017.7947573

DO - 10.1109/EDTM.2017.7947573

M3 - Conference contribution

SN - 978-1-5090-4660-7

SP - 224

EP - 225

BT - 1st IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

ER -