Impact of Ferroelectric Domain Switching in Nonvolatile Charge-Trapping Memory

Chia Chi Fan, Yu Chien Chiu, Chien Liu, Guan Lin Liou, Wen-Wei Lai, Yi Ru Chen, Chun-Hu Cheng, Chun-Yen Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations


In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (similar to 800ns) is more than three orders of magnitude faster than that of control trapping type.
Original languageEnglish
Title of host publication 1st IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
Number of pages2
StatePublished - 2017

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