Impact of Crystallization Method on Poly-Si Tunnel FETs

Yi Hsuan Chen, William Cheng Yu Ma, Jer Yi Lin, Chun Yen Lin, Po Yang Hsu, Chi Yuan Huang, Tien-Sheng Chao

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

In this letter, the impact of crystallization method on the electrical characteristics of polycrystalline silicon (poly-Si) tunnel field-effect transistors (TFETs) is investigated. Different crystallization methods may result in different amounts of interface traps (Nit) and bulk traps (NGB). TFETs crystallized with solid-phase crystallization (SPC) and metal-induced lateral crystallization (MILC) were fabricated and compared. In comparison with the SPC TFETs, the MILC TFETs exhibit ∼ 4.5× higher ON-state current ION, subthreshold swing reduction ΔS.S. ∼ 202 mV/decade, and larger ∼ 7.2× ON/OFF current ratio. According to the measurement of a monitor poly-Si thin-film transistor, replacing SPC with MILC results in a reduced Nit ∼ 0.60× and a reduced NGB ∼ 0.36×, respectively. It can enhance the gate-to-tunnel junction controllability. Consequently, lowering trap density favors reducing power consumption of TFETs and provides a promising solution for future low-power driving circuits in portable electronics.

Original languageEnglish
Article number7194770
Pages (from-to)1060-1062
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number10
DOIs
StatePublished - 1 Oct 2015

Keywords

  • Tunnel field-effect-transistor (TFET)
  • and metal-induced lateral crystallization (MILC)
  • poly-Si thin-film transistor (poly-Si TFTs)
  • trap density

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    Chen, Y. H., Ma, W. C. Y., Lin, J. Y., Lin, C. Y., Hsu, P. Y., Huang, C. Y., & Chao, T-S. (2015). Impact of Crystallization Method on Poly-Si Tunnel FETs. IEEE Electron Device Letters, 36(10), 1060-1062. [7194770]. https://doi.org/10.1109/LED.2015.2468060