Impact of Contact Resistance on 2D Negative-Capacitance FETs

Po Sheng Lu, Wei Xiang You, Pin Su

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this work, we investigate and analyze the impact of contact resistance (RSD) on the negative-capacitance FET with 2D transition-metal-dichalco-genide channel (NC-TMDFET). We report a ferroelectric capacitance (CFE) feedback mechanism of the NC-TMDFET that can be used to suppress the impact of RSD. Our study indicates that low remnant polarization (Pr) ferroelectric material can be utilized to leverage this effect for NC-TMDFETs under the presence of significant RSD.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages187-189
Number of pages3
ISBN (Print)9781538637111
DOIs
StatePublished - 26 Jul 2018
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: 13 Mar 201816 Mar 2018

Publication series

Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Conference

Conference2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
CountryJapan
CityKobe
Period13/03/1816/03/18

Keywords

  • 2D-TMD and contact resistance
  • ferroelectric material
  • Negative-Capacitance FET

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    Lu, P. S., You, W. X., & Su, P. (2018). Impact of Contact Resistance on 2D Negative-Capacitance FETs. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 187-189). [8421522] (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421522