Impact of channel doping on the device and NBTI performance in FinFETs for low power applications

Angada B. Sachid, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We present device-level characterization of digital, analog and NBTI parameters for p-FinFETs with different channel doping. We show that using channel doping we can trade-off device and NBTI performance. In p-FinFETs, Arsenic doped channel has better digital and analog performance and Boron doped channel has superior NBTI performance. Forward body bias reduces NBTI degradation in p-FinFETs.

Original languageEnglish
Title of host publicationProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
PublisherIEEE Computer Society
ISBN (Print)9781479922178
DOIs
StatePublished - 1 Jan 2014
Event2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan
Duration: 28 Apr 201430 Apr 2014

Publication series

NameProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

Conference

Conference2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
CountryTaiwan
CityHsinchu
Period28/04/1430/04/14

Fingerprint Dive into the research topics of 'Impact of channel doping on the device and NBTI performance in FinFETs for low power applications'. Together they form a unique fingerprint.

Cite this