Impact of channel dangling bonds on reliability characteristics of Flash memory on poly-Si thin films

Yu Hsien Lin*, Chao-Hsin Chien, Tung Huan Chou, Tien-Sheng Chao, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

In this letter, we fabricated the polySi-oxide-nitride-oxide-silicon (SONOS)-type Flash memories on polycrystalline-silicon thin films and found that dangling bonds presented along the grain boundaries in the channel significantly influence their reliability characteristics in the aspects of charge storage, drain disturbance, and gate disturbance. Employing a powerful defect passivation technique, i.e., NH 3 plasma treatment, the charge storage capability was clearly observed to be remarkably improved. Even so, the hydrogenated polycrystalline-silicon thin-film transistors (poly-Si-TFTs) still suffered from serious drain and gate disturbances, which exhibited behaviors that are quite specific and undoubtedly distinct from those observed in the conventional SONOS-type memories on single crystalline substrates.

Original languageEnglish
Pages (from-to)267-269
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number4
DOIs
StatePublished - 1 Apr 2007

Keywords

  • Dangling bonds
  • Flash memories
  • Polycrystalline-silicon thin-film transistor (poly-si-tft)
  • PolySi-oxide-nitride-oxide-silicon (sonos)-type memories

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