Impact of asymmetrical source/drain offsets on the operation of dual-gated poly-Si junctionless nanowire transistors

You Tai Chang, Ruei Jen Wu, Kang Ping Peng, Chun Jung Su, Pei Wen Li, Horng Chih Lin*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this paper, we present the fabrication and characterization of gate-all-around (GAA) junctionless (JL) poly-Si nanowire (NW) transistors with a dual-gated configuration, in which a sub-gate is placed over a shorter main-gate in order to control the NW potential for the offset regions between the main-gate and S/D regions. The fabricated transistors exhibit well-behaved performance with on/off current ratio of ~106 and subthreshold swing of 76 mV/decade. Inevitable misalignment of lithographic patterning for the main-gate structure leads to asymmetrical channel offsets between the main-gate to source pad and to drain pad, respectively. That is, the length of un-gated NW close to the source pad differs from that to the drain pad. An important finding of notes is that when drain bias is applied to the end of the NW with a longer channel offset, the drain current is lower than that applied to the shorter end. Such a trend become less profound as the sub-gate bias increases.

Original languageEnglish
Article number109613
JournalVacuum
Volume181
DOIs
StatePublished - Nov 2020

Keywords

  • Asymmetrical source/drain offsets
  • Dual-gate transistor
  • Nanowire transistors
  • TCAD simulation

Fingerprint Dive into the research topics of 'Impact of asymmetrical source/drain offsets on the operation of dual-gated poly-Si junctionless nanowire transistors'. Together they form a unique fingerprint.

Cite this