Impact of AlOx layer on resistive switching characteristics and device-to-device uniformity of bilayered HfOx-based resistive random access memory devices

Kai Chi Chuang*, Hao Tung Chung, Chi Yan Chu, Jun Dao Luo, Wei Shuo Li, Yi Shao Li, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Physics & Astronomy

Engineering & Materials Science