Impact of AlOx layer on resistive switching characteristics and device-to-device uniformity of bilayered HfOx-based resistive random access memory devices

Kai Chi Chuang*, Hao Tung Chung, Chi Yan Chu, Jun Dao Luo, Wei Shuo Li, Yi Shao Li, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


An AlOx layer was deposited on HfOx, and bilayered dielectric films were found to confine the formation locations of conductive filaments (CFs) during the forming process and then improve device-to-device uniformity. In addition, the Ti interposing layer was also adopted to facilitate the formation of oxygen vacancies. As a result, the resistive random access memory (RRAM) device with TiN/Ti/AlOx (1 nm)/HfOx (6 nm)/TiN stack layers demonstrated excellent device-to-device uniformity although it achieved slightly larger resistive switching characteristics, which were forming voltage (VForming) of 2.08 V, set voltage (VSet) of 1.96 V, and reset voltage (VReset) of %1.02 V, than the device with TiN/Ti/HfOx (6 nm)/TiN stack layers. However, the device with a thicker 2-nm-thick AlOx layer showed worse uniformity than the 1-nm-thick one. It was attributed to the increased oxygen atomic percentage in the bilayered dielectric films of the 2-nm-thick one. The difference in oxygen content showed that there would be less oxygen vacancies to form CFs. Therefore, the random growth of CFs would become severe and the device-to-device uniformity would degrade.

Original languageEnglish
Article number06KC01
JournalJapanese Journal of Applied Physics
Issue number6
StatePublished - 1 Jun 2018

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