Impact of alkali-earth-elements incorporation on Vfb roll-off characteristics of La2O3 gated MOS device

T. Koyanagi*, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The impacts of Mg, MgO, CaO, SrO or BaO incorporation on La 2O3 MOS devices have been examined. Roll-off behavior in the flat-band voltage (Vfb) of the MOS capacitors on equivalent oxide thickness (EOT) has been observed. The roll-off characteristic has been suppressed with Mg incorporation. On the other hand, with MgO, CaO, SrO or BaO incorporation, the characteristic has been enhanced. Interface-state density (Dit) has slightly increased and leakage-current density (J g) has unchanged with the incorporation.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 8
Pages67-74
Number of pages8
Edition3
DOIs
StatePublished - 2010
Event8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 11 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number3
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period11/10/1015/10/10

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