Impact of alkali earth elements incorporation on electrical characteristics of La2O3 gated MOS device

T. Koyanagi*, K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The impacts of Mg, SrO or BaO capping, alkali earth oxides, into La 2O3 MOS devices have been examined. A roll-off characteristic in flat-band voltage (Vfb) dependence on equivalent oxide thickness (EOT) has been suppressed with Mg capping and incorporation. On the other hand, capping with SrO and BaO have showed roll-up characteristics below an EOT of 1.2 nm. The main reason can be considered as the change in the number of fixed charges. No notable change in leakage current (Jg) has been observed.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Pages17-22
Number of pages6
Edition6
DOIs
StatePublished - 2009
Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 5 Oct 20097 Oct 2009

Publication series

NameECS Transactions
Number6
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period5/10/097/10/09

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    Koyanagi, T., Okamoto, K., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2009). Impact of alkali earth elements incorporation on electrical characteristics of La2O3 gated MOS device. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 17-22). (ECS Transactions; Vol. 25, No. 6). https://doi.org/10.1149/1.3206603