Impact Ionization in GaAs MESFET’s

Kelvin Hui, Chen-Ming Hu, Peter George, Ping K. Ko

Research output: Contribution to journalArticle

85 Scopus citations

Abstract

A method to measure impact ionization current in GaAs MESFET’s is presented. The impact ionization current is then used to calculate the maximum electric field in the channel and the impact ionization coefficient. Data for the electron impact ionization coefficient in ⟨110⟩ GaAs are extended beyond previous studies by five orders of magnitude. Impact ionization is taken into account in a new gate current model.

Original languageEnglish
Pages (from-to)113-115
Number of pages3
JournalIEEE Electron Device Letters
Volume11
Issue number3
DOIs
StatePublished - 1 Jan 1990

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