Immersion nickel deposition on blank silicon in aqueous solution containing ammonium fluoride

Xi Zhang*, Zhong Chen, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Immersion deposition of Ni on p-Si (100) blank substrates was carried out in an aqueous NiSO4 solution at a pH value of 8 through displacement reactions. Study of the early deposition stage revealed that incorporation of 2.5 M NH4F in solution promoted Ni nucleation significantly. By adding fluoride, it was observed that metallic Ni was deposited constantly at the expense of Si and the deposition was not self-limited. Sponge-like Ni deposits were observed and it might explain the non-limiting feature of such immersion Ni deposition over Si. Transmission electron microscopic images of Ni/Si cross-sections showed that during the reactions, Si oxide played a role of the intermediate phase. The whole process could have involved successive Si oxidation steps. Eventually the oxide was etched away by fluoride resulting in a nanoporous Ni film.

Original languageEnglish
Pages (from-to)4696-4701
Number of pages6
JournalThin Solid Films
Volume515
Issue number11
DOIs
StatePublished - 9 Apr 2007

Keywords

  • Ammonium fluoride
  • Chemical deposition
  • Nickel
  • Transmission electron microscopy

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