IIIB-7 Continuous Wave Visible InGaP/InGaAlP Quantum-Well Surface-Emitting Laser Diodes

Kai-Feng Huang, K. Tai, C. C. Wu, J. D. Wynn, J. D. Wynn

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Original language	English
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	40
Issue number	11
DOIs	https://doi.org/10.1109/16.239793
State	Published - 1 Jan 1993

Access to Document

@article{0a19dbf8b5a2463188a0030d50a50d40,

title = "IIIB-7 Continuous Wave Visible InGaP/InGaAlP Quantum-Well Surface-Emitting Laser Diodes",

author = "Kai-Feng Huang and K. Tai and Wu, {C. C.} and Wynn, {J. D.} and Wynn, {J. D.}",

year = "1993",

month = jan,

day = "1",

doi = "10.1109/16.239793",

language = "English",

volume = "40",

journal = "Ieee Transactions On Electron Devices",

issn = "0018-9383",

publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

number = "11",

}

TY - JOUR

T1 - IIIB-7 Continuous Wave Visible InGaP/InGaAlP Quantum-Well Surface-Emitting Laser Diodes

AU - Huang, Kai-Feng

AU - Tai, K.

AU - Wu, C. C.

AU - Wynn, J. D.

PY - 1993/1/1

Y1 - 1993/1/1

UR - http://www.scopus.com/inward/record.url?scp=84942840210&partnerID=8YFLogxK

U2 - 10.1109/16.239793

DO - 10.1109/16.239793

M3 - Article

AN - SCOPUS:84942840210

VL - 40

JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

SN - 0018-9383

IS - 11

ER -