III-V MOSFETs with a new self-aligned contact

Xingui Zhang*, Huaxin Guo, Chih Hsin Ko, Clement H. Wann, Chao Ching Cheng, Hau Yu Lin, Hock Chun Chin, Xiao Gong, Phyllis Shi Ya Lim, Guang Li Luo, Chun Yen Chang, Chao-Hsin Chien, Zong You Han, Shih Chiang Huang, Yee Chia Yeo.

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

17 Scopus citations

Abstract

We report the first demonstration of III-V n-MOSFETs with self-aligned contact technology. The self-aligned contact was formed using a salicide-like process which is compatible with CMOS process flow. A new epitaxy process was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. Nickel was deposited and annealed to form NiGeSi, and unreacted metal was removed. A second anneal diffuses Ge and Si into GaAs to form heavily n+ doped regions, and a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. MOSFETs with the new self-aligned metallization process were realized.

Original languageEnglish
Title of host publication2010 Symposium on VLSI Technology, VLSIT 2010
Pages233-234
Number of pages2
DOIs
StatePublished - 19 Oct 2010
Event2010 Symposium on VLSI Technology, VLSIT 2010 - Honolulu, HI, United States
Duration: 15 Jun 201017 Jun 2010

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference2010 Symposium on VLSI Technology, VLSIT 2010
CountryUnited States
CityHonolulu, HI
Period15/06/1017/06/10

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