II-VI light emitting diode with low operation voltage

Wen How Lan*, Y. T. Cheng, Alpha C.H. Lin, Y. T. Cheng, H. Chang, Wen Ray Chen, Yan Kuin Su, Shoou Jinn Chang, Wu-Ching Chou, C. S. Yang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


In our previous work, we first propose the Au/AuBe is a good ohmic contact material to p-type ZnTe. After apply the material to II-VI light emitting diode, the operation voltage as low as 2.4 V can be observed. The II-VI blue light emitting diode (LED) were grown in a RIBER 32P system with Zn(6N), Se(6N), Te (6N), Cd(6N) on (001) GaAs n+ substrate. The structure consisted a GaAs:Si (n+) buffer layer, ZnSe:Cl (0.5 um), ZnSe(200 A)/ZnCdSe (100 A) multiple quantum well, ZnSe(200 A), ZnSe:N(0.3 um), ZnSe:N/ZnTe:N multilayer and ZnTe:N (300 A). Standard photolithography technology was done to fabricate the diode. The mesa etch was done by K 2 Cr 2 O 7 : H 2 SO 4 : H 2 O etching solution. The p-type ohmic was done by AuBe/Au metal. The emission wavelength was 530 nm (room temperature) and 495 nm (30 K) with 2.4 V under CW operation. Since low operation voltage introduced less heat in the device, better thermal behavior can be expected with this low operation voltage.

Original languageEnglish
Pages (from-to)570-578
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1 Jan 2000
EventOptoelectronic Materials and Devices II - Taipei, Taiwan
Duration: 26 Jul 200028 Jul 2000

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