IEEE/MTT-S International Microwave Symposium

Sheng Yi Huang, Kun-Ming Chen, Guo-Wei Huang, Chun-Yen Chang, Cheng Chou Hung, Victor Liang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


An RF power MOSFET was proposed and manufactured in a standard 0.13 mu m CMOS technology. Without adding additional masks, cost and process, the breakdown voltage can be improved by using the N-well and shallow-trench-isolation processes to form a drift n(-) region. The breakdown voltage was 4.3V at gate bias of 1.2V. The cutoff frequency and maximum oscillation frequency were 68GHz and 87GHz, respectively. In addition, the power gain, output power and power-added efficiency were 16.8dB, 15.9dBm and 43.5%, respectively, at 2.4GHz. Good RF linearity also addressed OIP3 of 28.6dBm. The presented RF power transistor is cost effectively and can be applied into the power amplifier integration for RF SoC.
Original languageEnglish
Title of host publicationIEEE/MTT-S International Microwave Symposium
StatePublished - 2007


  • CMOS; linearity; power transistor; power amplifier; RF SoC

Fingerprint Dive into the research topics of 'IEEE/MTT-S International Microwave Symposium'. Together they form a unique fingerprint.

Cite this