ICP etching of sapphire substrates

Y. P. Hsu, S. J. Chang*, Y. K. Su, J. K. Sheu, Cheng-Huang Kuo, C. S. Chang, S. C. Shei

*Corresponding author for this work

Research output: Contribution to journalArticle

48 Scopus citations

Abstract

The etching behavior of sapphire has been investigated in an inductively couple plasma using Cl2, BCl3 and CH2Cl 2 as the reagent in this study. Inductively couple plasma etching rate of sapphire was investigated as function of a mixing gases ratio. The highest sapphire-etching rate was archived (1000 Å/min) with mixing BCl3/Cl2 gases for a coil power of 600 W, r.f. power of 150 W and process pressure of 5m Torr. The scanning electron microscopy was used to investigate the surface morphology and sidewall of sapphire. Several etching conditions yield highly anisotropic profiles with roughness sidewalls. These results have direct application to the fabrication of patterned sapphire substrate, which reduce the threading dislocation and increase the output light power and lifetime.

Original languageEnglish
Pages (from-to)1171-1174
Number of pages4
JournalOptical Materials
Volume27
Issue number6
DOIs
StatePublished - 1 Jan 2005

Keywords

  • BCl
  • Cl and CH Cl
  • PSS
  • Patterned sapphire substrate

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