ICM - an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs

Yuhua Cheng*, Kai Chen, Kiyotaka Imai, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaper

5 Scopus citations

Abstract

An analytical inversion charge model, ICM, based on surface potential solution and consideration of poly-gate depletion as well as the correction of quantum mechanical effect is presented. It is continuous and accurate from weak inversion to strong inversion, including the moderate inversion region of growing importance for low voltage/power circuits. The model is verified with extensive measured inversion charge data and applied to modeling MOSFET down to 0.13μm channel length.

Original languageEnglish
Pages109-112
Number of pages4
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97 - Cambridge, MA, USA
Duration: 8 Sep 199710 Sep 1997

Conference

ConferenceProceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97
CityCambridge, MA, USA
Period8/09/9710/09/97

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    Cheng, Y., Chen, K., Imai, K., & Hu, C-M. (1997). ICM - an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs. 109-112. Paper presented at Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97, Cambridge, MA, USA, . https://doi.org/10.1109/SISPAD.1997.621348