ICM - an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs

Yuhua Cheng; Kai Chen; Kiyotaka Imai; Chen-Ming Hu

doi:10.1109/SISPAD.1997.621348

ICM - an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs

Yuhua Cheng^*, Kai Chen, Kiyotaka Imai, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

5 Scopus citations

Abstract

An analytical inversion charge model, ICM, based on surface potential solution and consideration of poly-gate depletion as well as the correction of quantum mechanical effect is presented. It is continuous and accurate from weak inversion to strong inversion, including the moderate inversion region of growing importance for low voltage/power circuits. The model is verified with extensive measured inversion charge data and applied to modeling MOSFET down to 0.13μm channel length.

Original language	English
Pages	109-112
Number of pages	4
DOIs	https://doi.org/10.1109/SISPAD.1997.621348
State	Published - 1 Jan 1997
Event	Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97 - Cambridge, MA, USA Duration: 8 Sep 1997 → 10 Sep 1997

Conference

Conference	Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97
City	Cambridge, MA, USA
Period	8/09/97 → 10/09/97

Access to Document

10.1109/SISPAD.1997.621348

Fingerprint Dive into the research topics of 'ICM - an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs'. Together they form a unique fingerprint.

Cite this

@conference{37b1c22c0f244869806c9e6666d3e157,

title = "ICM - an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs",

abstract = "An analytical inversion charge model, ICM, based on surface potential solution and consideration of poly-gate depletion as well as the correction of quantum mechanical effect is presented. It is continuous and accurate from weak inversion to strong inversion, including the moderate inversion region of growing importance for low voltage/power circuits. The model is verified with extensive measured inversion charge data and applied to modeling MOSFET down to 0.13μm channel length.",

author = "Yuhua Cheng and Kai Chen and Kiyotaka Imai and Chen-Ming Hu",

year = "1997",

month = jan,

day = "1",

doi = "10.1109/SISPAD.1997.621348",

language = "English",

pages = "109--112",

note = "null ; Conference date: 08-09-1997 Through 10-09-1997",

}

ICM - an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs. / Cheng, Yuhua; Chen, Kai; Imai, Kiyotaka; Hu, Chen-Ming.

1997. 109-112 Paper presented at Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97, Cambridge, MA, USA, .

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - ICM - an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs

AU - Cheng, Yuhua

AU - Chen, Kai

AU - Imai, Kiyotaka

AU - Hu, Chen-Ming

PY - 1997/1/1

Y1 - 1997/1/1

N2 - An analytical inversion charge model, ICM, based on surface potential solution and consideration of poly-gate depletion as well as the correction of quantum mechanical effect is presented. It is continuous and accurate from weak inversion to strong inversion, including the moderate inversion region of growing importance for low voltage/power circuits. The model is verified with extensive measured inversion charge data and applied to modeling MOSFET down to 0.13μm channel length.

AB - An analytical inversion charge model, ICM, based on surface potential solution and consideration of poly-gate depletion as well as the correction of quantum mechanical effect is presented. It is continuous and accurate from weak inversion to strong inversion, including the moderate inversion region of growing importance for low voltage/power circuits. The model is verified with extensive measured inversion charge data and applied to modeling MOSFET down to 0.13μm channel length.

UR - http://www.scopus.com/inward/record.url?scp=0030649207&partnerID=8YFLogxK

U2 - 10.1109/SISPAD.1997.621348

DO - 10.1109/SISPAD.1997.621348

M3 - Paper

AN - SCOPUS:0030649207

SP - 109

EP - 112

Y2 - 8 September 1997 through 10 September 1997

ER -