An analytical inversion charge model, ICM, based on surface potential solution and consideration of poly-gate depletion as well as the correction of quantum mechanical effect is presented. It is continuous and accurate from weak inversion to strong inversion, including the moderate inversion region of growing importance for low voltage/power circuits. The model is verified with extensive measured inversion charge data and applied to modeling MOSFET down to 0.13μm channel length.
|Number of pages||4|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97 - Cambridge, MA, USA|
Duration: 8 Sep 1997 → 10 Sep 1997
|Conference||Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97|
|City||Cambridge, MA, USA|
|Period||8/09/97 → 10/09/97|