Abstract
An analytical inversion charge model, ICM, based on surface potential solution and consideration of poly-gate depletion as well as the correction of quantum mechanical effect is presented. It is continuous and accurate from weak inversion to strong inversion, including the moderate inversion region of growing importance for low voltage/power circuits. The model is verified with extensive measured inversion charge data and applied to modeling MOSFET down to 0.13μm channel length.
| Original language | English |
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| Pages | 109-112 |
| Number of pages | 4 |
| DOIs | |
| State | Published - 1 Jan 1997 |
| Event | Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97 - Cambridge, MA, USA Duration: 8 Sep 1997 → 10 Sep 1997 |
Conference
| Conference | Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97 |
|---|---|
| City | Cambridge, MA, USA |
| Period | 8/09/97 → 10/09/97 |
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Cheng, Y., Chen, K., Imai, K., & Hu, C-M. (1997). ICM - an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs. 109-112. Paper presented at Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97, Cambridge, MA, USA, . https://doi.org/10.1109/SISPAD.1997.621348