IC reliability simulation

Chen-Ming Hu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The motivation, challenges, and status of IC reliability simulation are discussed. The reliability simulator BERT (Berkeley Reliability Tool) is used to illustrate the physical models and approaches used to simulate the hot electron effect, oxide time-dependent breakdown, electromigration, and bipolar transistor gain degradation.

Original languageEnglish
Title of host publicationProceedings of the Custom Integrated Circuits Conference
PublisherPubl by IEEE
Pages31-34
ISBN (Print)0780300157
DOIs
StatePublished - 1 Dec 1991
EventProceedings of the IEEE 1991 Custom Integrated Circuits Conference - San Diego, CA, USA
Duration: 12 May 199115 May 1991

Publication series

NameProceedings of the Custom Integrated Circuits Conference
ISSN (Print)0886-5930

Conference

ConferenceProceedings of the IEEE 1991 Custom Integrated Circuits Conference
CitySan Diego, CA, USA
Period12/05/9115/05/91

Fingerprint Dive into the research topics of 'IC reliability simulation'. Together they form a unique fingerprint.

  • Cite this

    Hu, C-M. (1991). IC reliability simulation. In Proceedings of the Custom Integrated Circuits Conference (pp. 31-34). (Proceedings of the Custom Integrated Circuits Conference). Publ by IEEE. https://doi.org/10.1109/CICC.1991.163989