IC Reliability Simulation

Chen-Ming Hu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

The motivation and challenges of IC reliability simulation are discussed. Reliability simulator BERT is used to illustrate the physical models and approaches used to simulate the hot-electron effect, oxide time-dependent breakdown, electromigration, and bipolar transistor gain degradation.

Original languageEnglish
Pages (from-to)241-246
Number of pages6
JournalIEEE Journal of Solid-State Circuits
Volume27
Issue number3
DOIs
StatePublished - 1 Jan 1992

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