Hydrothermal growth of ZnO nanotubes on InGaP/GaAs/Ge solar cells

Chen Chen Chung, Kung Liang Lin, Hung Wei Yu, Nguyen Hong Quan, Chang Fu Dee, Edward Yi Chang*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A new design where ZnO nanotubes were grown on the antireflection (AR) layer coated on triple-junction (T-J) solar cell devices to enhance the light conversion efficiency. Compared to the bare T-J solar cells (without an AR layer), the performance of Si3N4 AR coated solar cell showed improvement. The sample with a layer of ZnO nanotubes grown in top of AR layer showed the lowest light reflection compared with the bare and solely AR coated T-J solar cell especially in the spectrum range of 350-500 nm. The use of ZnO nanotubes have increased the conversion efficiency by 4.9% compared with the conventional T-J solar cell. While the Si3N4 AR coated sample only increased the conversion efficiency by 3.2%. This result is quite encouraging as further refinement and variation in the experiment procedures could possibly bring more exciting performance in the future.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages517-520
Number of pages4
ISBN (Electronic)9781479957606
DOIs
StatePublished - 10 Oct 2014
Event11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur, Malaysia
Duration: 27 Aug 201429 Aug 2014

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Conference

Conference11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
CountryMalaysia
CityKuala Lumpur
Period27/08/1429/08/14

Keywords

  • Antireflection layer
  • Hydrothermal
  • Triple-junctions (T-J) solar cell
  • ZnO nanotube

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