Hydrogen instability induced by postannealing on poly-Si TFTs

Chia Chun Liao*, Min Chen Lin, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

This brief investigates hydrogen instability induced by postannealing. Results show that using a SiN capping layer can prevent the release of hydrogen from a polycrystalline-silicon channel. However, removing this SiN capping layer allows the hydrogen release during postannealing, and the resulting device performance becomes comparable to that of the control sample. Hydrogen release reduces the immunity of PBTI and NBTI. Two possible mechanisms can explain the increased preexisting defects associated with hydrogen release, which affects the NBTI and PBTI.

Original languageEnglish
Article number6185651
Pages (from-to)1807-1809
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume59
Issue number6
DOIs
StatePublished - 24 Apr 2012

Keywords

  • Hydrogen release
  • NBTI
  • PBTI
  • plasma discharge
  • postannealing

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