Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells

A. Zakharova, Shun-Tung Yen, K. A. Chao

Research output: Contribution to journalArticle

37 Scopus citations

Abstract

We have investigated the hybridization of the electron states, the light-hole states and the heavy-hole states in InAs/GaSb broken-gap quantum wells. This effect is profound when the InAs layer and the GaSb layer are sufficiently thick such that the electron level lies below the heavy-hole level and the light-hole level at zone center. To calculate the dispersions and the wave functions in these structures we have applied the scattering matrix algorithm to the eight-band k · p model. We have found a hybridization gap as large as 20 meV resulting from the anticrossing of the electron and the light-hole dispersion curves. A multiple anticrossing of the electron states, the light-hole states and the heavy-hole states may occur when the heavy hole level lies in the hybridization gap produced by the electron states and the light-hole states. This unusual hybridization of the three subbands, which behaves differently for the "spin-up" and the "spin-down" states, has been investigated in details around the anticrossing point. While the electronlike and light holelike states mix strongly, the heavy holelike state may remain unperturbed.

Original languageEnglish
Article number235332
Pages (from-to)2353321-2353328
Number of pages8
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number23
DOIs
StatePublished - 15 Dec 2001

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