Hybrid TiOx/fluoropolymer bi-layer dielectrics for low-voltage complementary inverters

Chao Feng Sung, Dhananjay Kekuda, Li Fen Chu, Fang-Chung Chen, Shiau Shin Cheng, Yuh Zheng Lee, Meng Chyi Wu, Chih Wei Chu*

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations


In this article, low temperature processed, reactively evaporated titanium oxide layers were utilized as gate dielectrics for achieving low voltage driven transistors and complementary inverters. The surface of the gate dielectric was modified by an ultra thin (∼30 nm) fluoropolymer Cytop® layer which partially helped to reduce the leakage in the dielectric films and also enhanced the organic transistor performance. The current investigation demonstrates the ability of these high capacitance bi-layer dielectrics (k ∼ 20). The combined p-type and n-type field-effect transistors show similar saturation mobility ∼0.3 cm2/V s-1 to achieve low voltage driven complementary circuits with output gain of 22. Low temperature processing of these dielectric layers make them easily integrated.

Original languageEnglish
Pages (from-to)154-158
Number of pages5
JournalOrganic Electronics
Issue number1
StatePublished - 1 Jan 2010


  • Dielectrics
  • Organic
  • Thin-film transistors
  • Titanium oxide

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    Sung, C. F., Kekuda, D., Chu, L. F., Chen, F-C., Cheng, S. S., Lee, Y. Z., Wu, M. C., & Chu, C. W. (2010). Hybrid TiOx/fluoropolymer bi-layer dielectrics for low-voltage complementary inverters. Organic Electronics, 11(1), 154-158. https://doi.org/10.1016/j.orgel.2009.09.020