Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

Min Cheng Chen, Chia Yi Lin, Kai Hsin Li, Lain Jong Li, Chang Hsiao Chen, Cheng Hao Chuang, Ming Dao Lee, Yi Ju Chen, Yun Fang Hou, Chang Hsien Lin, Chun Chi Chen, Bo Wei Wu, Cheng San Wu, Ivy Yang, Yao Jen Lee, Wen Kuan Yeh, Ta-Hui Wang, Fu Liang Yang, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics.

Original languageEnglish
Title of host publication2014 IEEE International Electron Devices Meeting, IEDM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages33.5.1-33.5.4
Volume2015-February
EditionFebruary
DOIs
StatePublished - 20 Feb 2015
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: 15 Dec 201417 Dec 2014

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISSN (Print)0163-1918

Conference

Conference2014 60th IEEE International Electron Devices Meeting, IEDM 2014
CountryUnited States
CitySan Francisco
Period15/12/1417/12/14

Fingerprint Dive into the research topics of 'Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<sub>th</sub> matching and CMOS-compatible 3DFETs'. Together they form a unique fingerprint.

Cite this