In this work, we employ carbon nanotube (CNT) doped PEDOT:PSS to increase the conductivity and evaluate the potential of CNT-doped PEDOT:PSS as a hole selective layer for conventional silicon solar cell. Two types of PEDOT: PSS noted as TC100, TC200 with a relative high and low CNT concentrations. The results have shown that PEDOT: PSS could effectively passivate the silicon surface. The contact resistivity for holes is also smaller than that for electrons on a polished surface. Finally, conventional solar cells with a polished or textured rear surfaces are incorporated with the TC100 and TC200. The results shown that the PEDOT:PSS increase the open-circuit voltage, and short-circuit current, compared to the reference cell. A power conversion efficiency of 14.55% has been achieved for the device with the TC100 hole selective layer.