Hybrid light-emitting devices by incorporating WO3 nanorod arrays as the electron transport layer and PEIE as the buffer layer

Chun Kai Chang, Szu Ping Wang, Sheng-Hsiung Yang*, Apolline Puaud, Thien Phap Nguyen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this research, we demonstrate novel inverted light-emitting devices based on n-typed tungsten trioxide (WO3) nanostructures. Two different types of WO3 nanostructures, including nanocluster layer (NCL) and nanorod arrays (NAs), were grown on the indium-tin oxide (ITO) substrates by the hydrothermal method. An ultra-thin polyethylenimine ethoxylated (PEIE) layer was deposited on top of WO3 nanostructures as the buffer layer for improving device performance. Inverted devices with the configuration of ITO/WO3 NCL or NAs/PEIE/poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene)/poly(3,4- ethylenedioxythiophene):poly(styrene sulfonate)/WO3 film/Au were constructed and evaluated. The best device based on WO3 NAs with height of 300 nm showed a max brightness of 3079 cd/m2 and current efficiency of 0.22 cd/A. Our observation and results open up new opportunities to fabricate hybrid light-emitting devices.

Original languageEnglish
Pages (from-to)667-677
Number of pages11
JournalSuperlattices and Microstructures
Volume113
DOIs
StatePublished - 1 Jan 2018

Keywords

  • Inverted light-emitting devices
  • Nanorod arrays
  • Polyethylenimine ethoxylated
  • Tungsten trioxide

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