Huge positive magnetoresistance in a gated AlGaAsGaAs high electron mobility transistor structure at high temperatures

C. T. Liang*, Yen Shung Tseng, Jau Yang Wu, Sheng-Di Lin, Chun Kai Yang, Yu Ru Li, Kuang Yao Chen, Po Tsun Lin, Li Hung Lin

*Corresponding author for this work

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Abstract

Magnetoresistivity measurements on a gated AlGaAsGaAs high electron mobility transistor (HEMT) structure were performed at high temperatures T. By changing the applied gate voltage Vg, we can investigate the observed huge positive magnetoresistance (PMR) at different effective disorder and density inhomogeneity within the same HEMT structure. The observed PMR value increases with increasing disorder in the depletion mode (Vg ≤0). Moreover, the PMR value is not limited by the quality of the HEMT structure at T=80 K. Such results pave the way for low-cost, high-throughput GaAs-based HEMT fabrication for future magnetic sensing and recording devices fully compatible with the mature HEMT technology.

Original languageEnglish
Article number132111
JournalApplied Physics Letters
Volume92
Issue number13
DOIs
StatePublished - 1 Jan 2008

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    Liang, C. T., Tseng, Y. S., Wu, J. Y., Lin, S-D., Yang, C. K., Li, Y. R., Chen, K. Y., Lin, P. T., & Lin, L. H. (2008). Huge positive magnetoresistance in a gated AlGaAsGaAs high electron mobility transistor structure at high temperatures. Applied Physics Letters, 92(13), [132111]. https://doi.org/10.1063/1.2906360