H2O-assisted O2 adsorption in sol-gel derived amorphous indium gallium zinc oxide thin film transistors

Wan Fang Chung*, Ting Chang Chang, Hung Wei Li, Shih Ching Chen, Yu Chun Chen, Tseung-Yuen Tseng, Ya-Hsiang Tai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

This paper investigates the environmental effects and related adsorbent species reactions on sol-gel derived amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The discrepancy between device characteristics measured in atmospheric and vacuum conditions was clarified through experiments with thermal annealing and different gas partial pressures. The measurement of a-IGZO TFTs in simulated water vapor environment was also utilized. We verified that the adsorbed water originating from the surrounding atmosphere can cause an increase in off-current and also enhance more oxygen molecule adsorption on the exposed back-channel surface, leading to more serious degradation in on-current.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number6
DOIs
StatePublished - 13 Apr 2011

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