H2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions

Cheng Ming Yu, Horng-Chih Lin*, Tiao Yuan Huang, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The effects of NH3 and H2 plasma passivation on the characteristics of poly-Si thin-film transistors (TFTs) with source/drain extensions induced by a bottom sub-gate were studied. Our results show that although significant improvements in device performance can be obtained by either passivation method, the NH3-plasma-treatment appears to be more effective in reducing the off-state leakage, subthreshold swing, and in improving mobility compared to H2 plasma passivation. Furthermore, NH3 plasma treatment is also found to be more effective in reducing the anomalous subthreshold hump phenomenon observed in nonplasma-treated short-channel devices. Detailed analysis suggests that all these improvements can be explained by the more effective passivation of traps distributed in both the front and back sides of the channel by NH3 plasma treatment.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume150
Issue number12
DOIs
StatePublished - 1 Dec 2003

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