Hot-wire CVD deposited n-type μc-Si films for μc-Si/c-Si heterojunction solar cell applications

Shui Yang Lien, Dong Sing Wuu*, Bing Rui Wu, Ray-Hua Horng, Ming Chun Tseng, Hsin Her Yu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Phosphorous-doped microcrystalline silicon (μc-Si) films were prepared using hot-wire chemical vapor deposition (HWCVD). Structural, electrical and optical properties of these thin films were systematically studied as a function of PH3 gas mixture ratio. We report recent results for p-type crystalline silicon-based heterojunction (HJ) solar cells using the HWCVD n-μc-Si film to form an n-p junction. The surface morphology of the crystalline Si substrate after hydrogen treatment was examined using atomic force microscopy. A transfer length method was used to modify the indium-tin-oxide (ITO) deposition parameters in order to reduce front ITO/n-μc-Si contact resistance. In our best solar cell sample (1 cm2) without any buffer layer, the conversion efficiency of 15.1% has been achieved with an open circuit voltage of 0.615 V, fill factor of 0.71 and short circuit current density of 34.6 mA/cm2 under 100 mW/cm2 condition. The spectral response of this cell will also be discussed.

Original languageEnglish
Pages (from-to)765-769
Number of pages5
JournalThin Solid Films
Issue number5
StatePublished - 15 Jan 2008


  • Atomic force microscopy
  • Hot-wire chemical vapor deposition (HWCVD)
  • Microcrystalline silicon
  • Solar cell

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