Hot hole stress induced leakage current (SILC) transient in tunnel oxides

Ta-Hui Wang; Nian Kai Zous; Jia Long Lai; Chimoon Huang

doi:10.1109/55.728896

Hot hole stress induced leakage current (SILC) transient in tunnel oxides

Ta-Hui Wang^*, Nian Kai Zous, Jia Long Lai, Chimoon Huang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The mechanisms and transient characteristics of hot hole stress induced leakage current (SILC) in tunned oxides are investigated. Positive oxide charge assisted tunneling is found to be a dominant SILC mechanism in a hot hole stressed device. The SILC transient is attributed to oxide hole detrapping and thus annihilation of positive charge assisted tunneling centers. Our characterization shows that the leakage current transient in a 100-Å oxide obeys a power law time dependence t ^-m with the power factor n significantly less than one. An annalytical model accounting for the observed time dependence is proposed.

Original language	English
Pages (from-to)	411-413
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	19
Issue number	11
DOIs	https://doi.org/10.1109/55.728896
State	Published - 1 Nov 1998

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abstract = " The mechanisms and transient characteristics of hot hole stress induced leakage current (SILC) in tunned oxides are investigated. Positive oxide charge assisted tunneling is found to be a dominant SILC mechanism in a hot hole stressed device. The SILC transient is attributed to oxide hole detrapping and thus annihilation of positive charge assisted tunneling centers. Our characterization shows that the leakage current transient in a 100-{\AA} oxide obeys a power law time dependence t -m with the power factor n significantly less than one. An annalytical model accounting for the observed time dependence is proposed. ",

author = "Ta-Hui Wang and Zous, {Nian Kai} and Lai, {Jia Long} and Chimoon Huang",

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AU - Wang, Ta-Hui

AU - Zous, Nian Kai

AU - Lai, Jia Long

AU - Huang, Chimoon

PY - 1998/11/1

Y1 - 1998/11/1

N2 - The mechanisms and transient characteristics of hot hole stress induced leakage current (SILC) in tunned oxides are investigated. Positive oxide charge assisted tunneling is found to be a dominant SILC mechanism in a hot hole stressed device. The SILC transient is attributed to oxide hole detrapping and thus annihilation of positive charge assisted tunneling centers. Our characterization shows that the leakage current transient in a 100-Å oxide obeys a power law time dependence t -m with the power factor n significantly less than one. An annalytical model accounting for the observed time dependence is proposed.

AB - The mechanisms and transient characteristics of hot hole stress induced leakage current (SILC) in tunned oxides are investigated. Positive oxide charge assisted tunneling is found to be a dominant SILC mechanism in a hot hole stressed device. The SILC transient is attributed to oxide hole detrapping and thus annihilation of positive charge assisted tunneling centers. Our characterization shows that the leakage current transient in a 100-Å oxide obeys a power law time dependence t -m with the power factor n significantly less than one. An annalytical model accounting for the observed time dependence is proposed.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

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Hot hole stress induced leakage current (SILC) transient in tunnel oxides

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