Hot-Electron-Induced Traps Studied Through the Random Telegraph Noise

P. Fang*, Kwok K. Hung, Ping K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

44 Scopus citations

Abstract

Random telegraph signal (RTS) measurements have been used to study individual hot-carrier-induced trap in nMOS-FET's. Single-trap filling and emptying can cause 0.1% step noise in channel current. Trap location (3–10 A from interface), time constant (~10 ms), and energy are found to be quite different from those of prestress (process-induced) traps. The type (acceptor or donor) of the traps can also be identified by RTS measurements; both the process and stress-induced traps with energies near the conduction band edge are found to be of the acceptor type for nMOSFET's and trap levels near the valence band edge are found to be of the donor type for pMOSFET's.

Original languageEnglish
Pages (from-to)273-275
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number6
DOIs
StatePublished - 1 Jan 1991

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