IG in p-channel SOI (silicon-on-insulator) MOSFETs is modeled and device degradation is characterized. It is found that Em is about the same as in bulk devices. The SOI devices used in this study were p+ polysilicon gate P-channel MOSFETs fabricated using a modified submicron CMOS technology on SIMOX (Separation by IMplanted OXygen) wafers. It is shown that the peak degradation of both ID and Gm occurs close to the Ig peak. This indicates that electron injection is the dominant mechanism for PMOS degradation in SOI and similar to bulk PMOS.