@inproceedings{e61cf7a5a1c34711a2d2f11c50ff2088,
title = "Hot electron gate current and degradation in P-channel SOI MOSFET's",
abstract = "IG in p-channel SOI (silicon-on-insulator) MOSFETs is modeled and device degradation is characterized. It is found that Em is about the same as in bulk devices. The SOI devices used in this study were p+ polysilicon gate P-channel MOSFETs fabricated using a modified submicron CMOS technology on SIMOX (Separation by IMplanted OXygen) wafers. It is shown that the peak degradation of both ID and Gm occurs close to the Ig peak. This indicates that electron injection is the dominant mechanism for PMOS degradation in SOI and similar to bulk PMOS.",
author = "J. Chen and K. Quader and R. Solomon and T. Chan and P. Ko and Chen-Ming Hu",
year = "1992",
month = jan,
day = "1",
doi = "10.1109/SOI.1991.162830",
language = "English",
isbn = "0780301846",
series = "1991 IEEE International SOI Conference Proceedings",
publisher = "Publ by IEEE",
pages = "8--9",
booktitle = "1991 IEEE International SOI Conference Proceedings",
note = "null ; Conference date: 01-10-1991 Through 03-10-1991",
}