Hot electron gate current and degradation in P-channel SOI MOSFET's

J. Chen; K. Quader; R. Solomon; T. Chan; P. Ko; Chen-Ming Hu

doi:10.1109/SOI.1991.162830

Hot electron gate current and degradation in P-channel SOI MOSFET's

J. Chen^*, K. Quader, R. Solomon, T. Chan, P. Ko, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

I_G in p-channel SOI (silicon-on-insulator) MOSFETs is modeled and device degradation is characterized. It is found that E_m is about the same as in bulk devices. The SOI devices used in this study were _p+ polysilicon gate P-channel MOSFETs fabricated using a modified submicron CMOS technology on SIMOX (Separation by IMplanted OXygen) wafers. It is shown that the peak degradation of both I_D and G_m occurs close to the I_g peak. This indicates that electron injection is the dominant mechanism for PMOS degradation in SOI and similar to bulk PMOS.

Original language	English
Title of host publication	1991 IEEE International SOI Conference Proceedings
Publisher	Publ by IEEE
Pages	8-9
Number of pages	2
ISBN (Print)	0780301846
DOIs	https://doi.org/10.1109/SOI.1991.162830
State	Published - 1 Jan 1992
Event	1991 IEEE International SOI Conference - Vail Valley, CO, USA Duration: 1 Oct 1991 → 3 Oct 1991

Publication series

Name	1991 IEEE International SOI Conference Proceedings

Conference

Conference	1991 IEEE International SOI Conference
City	Vail Valley, CO, USA
Period	1/10/91 → 3/10/91

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title = "Hot electron gate current and degradation in P-channel SOI MOSFET's",

abstract = "IG in p-channel SOI (silicon-on-insulator) MOSFETs is modeled and device degradation is characterized. It is found that Em is about the same as in bulk devices. The SOI devices used in this study were p+ polysilicon gate P-channel MOSFETs fabricated using a modified submicron CMOS technology on SIMOX (Separation by IMplanted OXygen) wafers. It is shown that the peak degradation of both ID and Gm occurs close to the Ig peak. This indicates that electron injection is the dominant mechanism for PMOS degradation in SOI and similar to bulk PMOS.",

author = "J. Chen and K. Quader and R. Solomon and T. Chan and P. Ko and Chen-Ming Hu",

year = "1992",

month = jan,

day = "1",

doi = "10.1109/SOI.1991.162830",

language = "English",

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series = "1991 IEEE International SOI Conference Proceedings",

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Chen, J, Quader, K, Solomon, R, Chan, T, Ko, P & Hu, C-M 1992, Hot electron gate current and degradation in P-channel SOI MOSFET's. in 1991 IEEE International SOI Conference Proceedings. 1991 IEEE International SOI Conference Proceedings, Publ by IEEE, pp. 8-9, 1991 IEEE International SOI Conference, Vail Valley, CO, USA, 1/10/91. https://doi.org/10.1109/SOI.1991.162830

Hot electron gate current and degradation in P-channel SOI MOSFET's. / Chen, J.; Quader, K.; Solomon, R.; Chan, T.; Ko, P.; Hu, Chen-Ming.

1991 IEEE International SOI Conference Proceedings. Publ by IEEE, 1992. p. 8-9 (1991 IEEE International SOI Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Hot electron gate current and degradation in P-channel SOI MOSFET's

AU - Chen, J.

AU - Quader, K.

AU - Solomon, R.

AU - Chan, T.

AU - Ko, P.

AU - Hu, Chen-Ming

PY - 1992/1/1

Y1 - 1992/1/1

N2 - IG in p-channel SOI (silicon-on-insulator) MOSFETs is modeled and device degradation is characterized. It is found that Em is about the same as in bulk devices. The SOI devices used in this study were p+ polysilicon gate P-channel MOSFETs fabricated using a modified submicron CMOS technology on SIMOX (Separation by IMplanted OXygen) wafers. It is shown that the peak degradation of both ID and Gm occurs close to the Ig peak. This indicates that electron injection is the dominant mechanism for PMOS degradation in SOI and similar to bulk PMOS.

AB - IG in p-channel SOI (silicon-on-insulator) MOSFETs is modeled and device degradation is characterized. It is found that Em is about the same as in bulk devices. The SOI devices used in this study were p+ polysilicon gate P-channel MOSFETs fabricated using a modified submicron CMOS technology on SIMOX (Separation by IMplanted OXygen) wafers. It is shown that the peak degradation of both ID and Gm occurs close to the Ig peak. This indicates that electron injection is the dominant mechanism for PMOS degradation in SOI and similar to bulk PMOS.

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M3 - Conference contribution

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SN - 0780301846

T3 - 1991 IEEE International SOI Conference Proceedings

SP - 8

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BT - 1991 IEEE International SOI Conference Proceedings

PB - Publ by IEEE

Y2 - 1 October 1991 through 3 October 1991

ER -

Hot electron gate current and degradation in P-channel SOI MOSFET's

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