Hot electron gate current and degradation in P-channel SOI MOSFET's

J. Chen*, K. Quader, R. Solomon, T. Chan, P. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

IG in p-channel SOI (silicon-on-insulator) MOSFETs is modeled and device degradation is characterized. It is found that Em is about the same as in bulk devices. The SOI devices used in this study were p+ polysilicon gate P-channel MOSFETs fabricated using a modified submicron CMOS technology on SIMOX (Separation by IMplanted OXygen) wafers. It is shown that the peak degradation of both ID and Gm occurs close to the Ig peak. This indicates that electron injection is the dominant mechanism for PMOS degradation in SOI and similar to bulk PMOS.

Original languageEnglish
Title of host publication1991 IEEE International SOI Conference Proceedings
PublisherPubl by IEEE
Pages8-9
Number of pages2
ISBN (Print)0780301846
DOIs
StatePublished - 1 Jan 1992
Event1991 IEEE International SOI Conference - Vail Valley, CO, USA
Duration: 1 Oct 19913 Oct 1991

Publication series

Name1991 IEEE International SOI Conference Proceedings

Conference

Conference1991 IEEE International SOI Conference
CityVail Valley, CO, USA
Period1/10/913/10/91

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