A comprehensive study of hot-electron-induced substrate and gate currents in deep-submicrometer MOSFETs is presented. The substrate- and gate-current characteristics for devices with channel lengths as small as 0.2 μm and oxide thickness as thin as 55 angstrom are examined. Implications for MOSFET reliability and EPROM programming are discussed. In the deep-submicrometer regime, established hot-electron concepts and models are found to be applicable; however, consideration of the finite depth of the current path and current-crowding-induced weak gain control becomes much more important. With these modifications, physical analytical models for substrate and gate currents are developed and verified for deep-submicrometer devices.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1988|
|Event||Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA|
Duration: 11 Dec 1988 → 14 Dec 1988