Hot-electron currents in deep-submicrometer MOSFETs

J. Chung*, M. C. Jeng, G. May, P. K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

28 Scopus citations

Abstract

A comprehensive study of hot-electron-induced substrate and gate currents in deep-submicrometer MOSFETs is presented. The substrate- and gate-current characteristics for devices with channel lengths as small as 0.2 μm and oxide thickness as thin as 55 angstrom are examined. Implications for MOSFET reliability and EPROM programming are discussed. In the deep-submicrometer regime, established hot-electron concepts and models are found to be applicable; however, consideration of the finite depth of the current path and current-crowding-induced weak gain control becomes much more important. With these modifications, physical analytical models for substrate and gate currents are developed and verified for deep-submicrometer devices.

Original languageEnglish
Pages (from-to)200-203
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1988
EventTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
Duration: 11 Dec 198814 Dec 1988

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