HOT CARRIERS INDUCED DEGRADATION IN THIN GATE OXIDE MOSFETs.

M. S. Liang*, C. Chang, W. Yang, Chen-Ming Hu, R. W. Brodersen

*Corresponding author for this work

Research output: Contribution to journalConference article

19 Scopus citations
Original languageEnglish
Pages (from-to)186-189
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1983

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