Hot-carrier reliability of ultra-thin gate oxide CMOS

Hisayo Sasaki Momose, Shin Ichi Nakamura, Tatsuya Ohguro, Takashi Yoshitomi, Eiji Morifuji, Toyota Morimoto, Yasuhiro Katsumata, Hiroshi Iwai

Research output: Contribution to journalArticle

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Abstract

Hot-carrier degradation on electrical characteristics of MOSFETs in the direct-tunneling regime of the gate oxide was investigated under a wide range of conditions, namely stress bias, oxide thickness, gate length, and channel-type dependence. It was confirmed that the transconductance degradation of n-MOSFETs with thinner gate oxides is smaller than that of thicker gate oxide MOSFETs, in spite of larger gate direct-tunneling leakage current and larger hot-carrier generation. For p-MOSFETs, little degradation was observed under all conditions of stress bias, oxide thickness, and gate length.

Original languageEnglish
Pages (from-to)2035-2044
Number of pages10
JournalSolid-State Electronics
Volume44
Issue number11
DOIs
StatePublished - 1 Nov 2000

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    Momose, H. S., Nakamura, S. I., Ohguro, T., Yoshitomi, T., Morifuji, E., Morimoto, T., Katsumata, Y., & Iwai, H. (2000). Hot-carrier reliability of ultra-thin gate oxide CMOS. Solid-State Electronics, 44(11), 2035-2044. https://doi.org/10.1016/S0038-1101(00)00101-5