Hot-carrier reliability of S4D n-Mosfets

T. Yoshitomi*, M. Saito, T. Ohguro, M. Ono, H. S. Momose, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

The hot-carrier reliability of S4D MOSFETs was investigated for the first time. The S4D structure offers a large improvement in current degradation as compared with the LDD structure, despite the greater current driving-ability. We estimate that a 0.2 ¿m gate length S4D n-MOSFET will operate with good hot-carrier reliability for more than 10 years at a supply voltage of 2 V.

Original languageEnglish
Title of host publicationESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
EditorsMassimo Rudan, Giorgio Baccarani
PublisherIEEE Computer Society
Pages65-68
Number of pages4
ISBN (Electronic)286332196X
ISBN (Print)9782863321966
StatePublished - 1996
Event26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy
Duration: 9 Sep 199611 Sep 1996

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference26th European Solid State Device Research Conference, ESSDERC 1996
CountryItaly
CityBologna
Period9/09/9611/09/96

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  • Cite this

    Yoshitomi, T., Saito, M., Ohguro, T., Ono, M., Momose, H. S., & Iwai, H. (1996). Hot-carrier reliability of S4D n-Mosfets. In M. Rudan, & G. Baccarani (Eds.), ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference (pp. 65-68). [5436216] (European Solid-State Device Research Conference). IEEE Computer Society.