Hot-carrier reliability of P-MOSFET with ultra-thin silicon nitride gate dielectric

I. Polishchuk; Y. C. Yeo; Q. Lu; T. J. King; Chen-Ming Hu

doi:10.1109/RELPHY.2001.922937

Hot-carrier reliability of P-MOSFET with ultra-thin silicon nitride gate dielectric

I. Polishchuk^*, Y. C. Yeo, Q. Lu, T. J. King, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

The degradation of 100 nm effective channel length p-MOS transistors with 14 Å equivalent oxide thickness JVD Si₃N₄ gate dielectric under hot-carrier stress is studied. Interface-state generation is identified as the dominant degradation mechanism. Hot-carrier-induced gate leakage may become a new reliability concern. Hot-carrier reliability of 14 Å Si₃N₄ transistors is compared to reliability of 16 Å SiO₂ transistors.

Original language	English
Title of host publication	2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	425-430
Number of pages	6
ISBN (Electronic)	0780365879
DOIs	https://doi.org/10.1109/RELPHY.2001.922937
State	Published - 1 Jan 2001
Event	39th Annual IEEE International Reliability Physics Symposium, IRPS 2001 - Orlando, United States Duration: 30 Apr 2001 → 3 May 2001

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2001-January
ISSN (Print)	1541-7026

Conference

Conference	39th Annual IEEE International Reliability Physics Symposium, IRPS 2001
Country	United States
City	Orlando
Period	30/04/01 → 3/05/01

Keywords

CMOS process
Degradation
Dielectric materials
Fabrication
High K dielectric materials
High-K gate dielectrics
Hot carriers
MOSFET circuits
Silicon
Stress

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Polishchuk, I., Yeo, Y. C., Lu, Q., King, T. J., & Hu, C-M. (2001). Hot-carrier reliability of P-MOSFET with ultra-thin silicon nitride gate dielectric. In 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual (pp. 425-430). [922937] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2001-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2001.922937

Polishchuk, I. ; Yeo, Y. C. ; Lu, Q. ; King, T. J. ; Hu, Chen-Ming. / Hot-carrier reliability of P-MOSFET with ultra-thin silicon nitride gate dielectric. 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 425-430 (IEEE International Reliability Physics Symposium Proceedings).

@inproceedings{73e8d74e14ec4522bcfd5099703530e7,

title = "Hot-carrier reliability of P-MOSFET with ultra-thin silicon nitride gate dielectric",

abstract = "The degradation of 100 nm effective channel length p-MOS transistors with 14 {\AA} equivalent oxide thickness JVD Si3N4 gate dielectric under hot-carrier stress is studied. Interface-state generation is identified as the dominant degradation mechanism. Hot-carrier-induced gate leakage may become a new reliability concern. Hot-carrier reliability of 14 {\AA} Si3N4 transistors is compared to reliability of 16 {\AA} SiO2 transistors.",

keywords = "CMOS process, Degradation, Dielectric materials, Fabrication, High K dielectric materials, High-K gate dielectrics, Hot carriers, MOSFET circuits, Silicon, Stress",

author = "I. Polishchuk and Yeo, {Y. C.} and Q. Lu and King, {T. J.} and Chen-Ming Hu",

year = "2001",

month = jan,

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doi = "10.1109/RELPHY.2001.922937",

language = "English",

series = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Polishchuk, I, Yeo, YC, Lu, Q, King, TJ & Hu, C-M 2001, Hot-carrier reliability of P-MOSFET with ultra-thin silicon nitride gate dielectric. in 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual., 922937, IEEE International Reliability Physics Symposium Proceedings, vol. 2001-January, Institute of Electrical and Electronics Engineers Inc., pp. 425-430, 39th Annual IEEE International Reliability Physics Symposium, IRPS 2001, Orlando, United States, 30/04/01. https://doi.org/10.1109/RELPHY.2001.922937

Hot-carrier reliability of P-MOSFET with ultra-thin silicon nitride gate dielectric. / Polishchuk, I.; Yeo, Y. C.; Lu, Q.; King, T. J.; Hu, Chen-Ming.

2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual. Institute of Electrical and Electronics Engineers Inc., 2001. p. 425-430 922937 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2001-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hu, Chen-Ming

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AB - The degradation of 100 nm effective channel length p-MOS transistors with 14 Å equivalent oxide thickness JVD Si3N4 gate dielectric under hot-carrier stress is studied. Interface-state generation is identified as the dominant degradation mechanism. Hot-carrier-induced gate leakage may become a new reliability concern. Hot-carrier reliability of 14 Å Si3N4 transistors is compared to reliability of 16 Å SiO2 transistors.

KW - CMOS process

KW - Degradation

KW - Dielectric materials

KW - Fabrication

KW - High K dielectric materials

KW - High-K gate dielectrics

KW - Hot carriers

KW - MOSFET circuits

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Polishchuk I, Yeo YC, Lu Q, King TJ, Hu C-M. Hot-carrier reliability of P-MOSFET with ultra-thin silicon nitride gate dielectric. In 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual. Institute of Electrical and Electronics Engineers Inc. 2001. p. 425-430. 922937. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2001.922937