Hot carrier reliability of n-MOSFET with ultra-thin HfO2 gate dielectric and poly-Si gate

Qiang Lu, H. Takeuchi, R. Lin, Tsu Jae King, Chen-Ming Hu, K. Onishi, Rino Choi, Chang Seok Kang, J. C. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

The hot carrier reliability of n-channel MOSFETs with 11 Å EOT HfO2 gate dielectric and poly-Si gates was studied. Under peak ISUB stress conditions, n-FETs with HfO2 gate dielectric show longer lifetime when compared to SiO2 n-FETs for the same stress substrate current. At room temperature, the 0.15 μm channel length HfO2 n-FETs are projected to have a 10-year lifetime at VD= 2.76 V.

Original languageEnglish
Title of host publication2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages429-430
Number of pages2
ISBN (Electronic)0780373529
DOIs
StatePublished - 1 Jan 2002
Event40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 - Dallas, United States
Duration: 7 Apr 200211 Apr 2002

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2002-January
ISSN (Print)1541-7026

Conference

Conference40th Annual IEEE International Reliability Physics Symposium, IRPS 2002
CountryUnited States
CityDallas
Period7/04/0211/04/02

Keywords

  • Annealing
  • Capacitance-voltage characteristics
  • Dielectric devices
  • Dielectric substrates
  • Hafnium oxide
  • Hot carriers
  • MOSFET circuits
  • Stress
  • Temperature
  • Voltage

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