Hot-carrier reliability of bipolar transistors

David Burnett*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations

Abstract

A study of bipolar degradation over a range of stress and measurement conditions is presented. It is shown that the excess base current, ΔIB, varies in a power-law manner with JC, IR, and t. The IR dependence results from a significant nonlocal effect in electron temperature that occurs at the periphery of the emitter due to the narrow depletion width. A quasistatic model of the degradation, suitable for SPICE circuit simulation, is presented and used to simulate the degradation of a BiCMOS inverter and differential pair circuit. The simulation of an advanced BiCMOS process indicates a degradation in the low-to-high propagation delay of 7% and 300 K and 3% at 110 K after 10 years of operation with CL = 2 pf and VCC = 5.5 V. For emitter-coupled pair circuits, the base current degradation can create a voltage drop across the base resistance, resulting in an additional offset voltage component. With the modeling methodology presented, one can predict the effect of varying the emitter-extrinsic-base junction doping profile on circuit reliability.

Original languageEnglish
Pages (from-to)164-169
Number of pages6
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1 Dec 1990
EventTwenty Eight International Reliability Physics Symposium 1990 - New Orleans, LA, USA
Duration: 27 Mar 199029 Mar 1990

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