Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology

Howard Chih Hao Wang, Carlos H. Diaz, Boon Khim Liew, Jack Yuan Chen Sun, Ta-Hui Wang

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

This letter presents a deep submicron CMOS process that takes advantage of phosphorus transient enhanced diffusion (TED) to improve the hot carrier reliability of 3.3 V input/output transistors. Arsenic/phosphorus LDD nMOSFETs with and without TED are fabricated. The TED effects on a LDD junction profile, device substrate current and transconductance degradation are evaluated. Substantial substrate current reduction and hot carrier lifetime improvement for the input/output devices are attained due to a more graded n - LDD doping profile by taking advantage of phosphorus TED.

Original languageEnglish
Pages (from-to)598-600
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number12
DOIs
StatePublished - 1 Dec 2000

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