Hot carrier reliability for low Vdd technology and circuit operation was investigated. It is found that a degraded NMOSFET has larger Id degradation at lower Vdd operation. Moreover, I/O circuits at low Vdd have more stringent requirement for hot carrier reliability. CMOS input threshold voltage is increased after either N or P MOSFET degradation as is the output low voltage.
|Number of pages||3|
|State||Published - 1 Dec 1995|
|Event||Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China|
Duration: 24 Oct 1995 → 28 Oct 1995
|Conference||Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology|
|Period||24/10/95 → 28/10/95|