Hot-carrier injection-induced disturb and improvement methods in 3d NAND flash memory

Wei Liang Lin*, Wen Jer Tsai, C. C. Cheng, Chun Chang Lu, S. H. Ku, Y. W. Chang, Guan Wei Wu, Lenvis Liu, S. W. Hwang, Tao Cheng Lu, Kuang Chao Chen, Tseung Yuen Tseng, Chih Yuan Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We investigate a hot-carrier injection-induced program disturb in a 3D NAND flash memory. As there exist specific coding patterns, a 'down-coupling' region and a 'pre-charge' regions are formed during program-verify and the following program phases, respectively, in the inhibit cell strings. A high heating field is built nearby the PGM wordline. Hot carriers may inject into the inhibit cells as Vpgm is applied. Soft ramp-down and pre-Turn-on schemes are proposed to mitigate this disturb.

Original languageEnglish
Title of host publication2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728109428
DOIs
StatePublished - Apr 2019
Event2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 - Hsinchu, Taiwan
Duration: 22 Apr 201925 Apr 2019

Publication series

Name2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

Conference

Conference2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
CountryTaiwan
CityHsinchu
Period22/04/1925/04/19

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