Hot-Carrier-Induced MOSFET Degradation Under AC Stress

J. Y. Choi, P. K. Ko, Chen-Ming Hu

Research output: Contribution to journalArticle

51 Scopus citations

Abstract

The effects of gate and drain voltage waveforms on the hotcarrier-induced MOSFET degradation are studied. Drain voltage transients have little effect on the degradation rate. Only the falling edge of the gate pulse in the presence of a high drain voltage enhances the degradation rate. For devices in typical inverter circuits, dc stress results together with the substrate current waveform can predict the degradation rate under ac stress for a wide range of rise and delay times.

Original languageEnglish
Pages (from-to)333-335
Number of pages3
JournalIEEE Electron Device Letters
Volume8
Issue number8
DOIs
StatePublished - 1 Jan 1987

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