Hot-Carrier-Induced Degradation in p-MOSFET's Under AC Stress

T. C. Ong, Kouichi Seki, P. K. Ko, Chen-Ming Hu

Research output: Contribution to journalArticle

9 Scopus citations


Hot-carrier-induced degradation in p-MOSFET's due to ac stress has been studied. Lifetimes under ac stress are calculated with a quasi-static model using parameters extracted from dc stress data. For inverter-like waveforms, the measurement data show reasonable agreement with the simulation results. For waveforms with turn-off transient occurring in the presence of high VD, more degradation than the model predicts is found if the transient is short (≤ 10 ns) and VG is high.

Original languageEnglish
Pages (from-to)211-213
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
StatePublished - 1 Jan 1988

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