Hot-Carrier Effects in Thin-Film Fully Depleted SOI MOSFET's

Z. J. Ma, H. J. Wann, M. Chan, J. C. King, P. K. Ko, Chen-Ming Hu, Y. C. Cheng

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

Previous conflicting reports concerning fully depleted SOI device hot electron reliability may result from overestimation of channel electric field (Em). Experimental results using SOI MOSFET's with body contacts indicate that Emis just a weak function of thin-film SOI thickness (Tsi) and that Emcan be significantly lower than in a bulk device. with drain junction depth (X j) comparable to SOI's Tsi. The theoretical correlation between SOI MOSFET's gate current and substrate current are experimentally confirmed. This provides a means (IG) of studying Emin SOI device without body contacts. Thin-film SOI MOSFET's have better prospects for meeting breakdown voltage and hot-electron reliability requirements than previously thought.

Original languageEnglish
Pages (from-to)218-220
Number of pages3
JournalIEEE Electron Device Letters
Volume15
Issue number6
DOIs
StatePublished - 1 Jan 1994

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