Hot-Carrier Effects in Thin-Film Fully Depleted SOI MOSFET's

Z. J. Ma; H. J. Wann; M. Chan; J. C. King; P. K. Ko; Chen-Ming Hu; Y. C. Cheng

doi:10.1109/55.286697

Hot-Carrier Effects in Thin-Film Fully Depleted SOI MOSFET's

Z. J. Ma, H. J. Wann, M. Chan, J. C. King, P. K. Ko, Chen-Ming Hu, Y. C. Cheng

International College of Semiconductor Technology

Research output: Contribution to journal › Article

23 Scopus citations

Abstract

Previous conflicting reports concerning fully depleted SOI device hot electron reliability may result from overestimation of channel electric field (Em). Experimental results using SOI MOSFET's with body contacts indicate that Emis just a weak function of thin-film SOI thickness (Tsi) and that Emcan be significantly lower than in a bulk device. with drain junction depth (X j) comparable to SOI's Tsi. The theoretical correlation between SOI MOSFET's gate current and substrate current are experimentally confirmed. This provides a means (IG) of studying Emin SOI device without body contacts. Thin-film SOI MOSFET's have better prospects for meeting breakdown voltage and hot-electron reliability requirements than previously thought.

Original language	English
Pages (from-to)	218-220
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	15
Issue number	6
DOIs	https://doi.org/10.1109/55.286697
State	Published - 1 Jan 1994

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abstract = "Previous conflicting reports concerning fully depleted SOI device hot electron reliability may result from overestimation of channel electric field (Em). Experimental results using SOI MOSFET's with body contacts indicate that Emis just a weak function of thin-film SOI thickness (Tsi) and that Emcan be significantly lower than in a bulk device. with drain junction depth (X j) comparable to SOI's Tsi. The theoretical correlation between SOI MOSFET's gate current and substrate current are experimentally confirmed. This provides a means (IG) of studying Emin SOI device without body contacts. Thin-film SOI MOSFET's have better prospects for meeting breakdown voltage and hot-electron reliability requirements than previously thought.",

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AU - Cheng, Y. C.

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