The degradation of self-aligned, polysilicon emitter transistors is described for a wide range of constant current stress on several device sizes. The experimental results indicate that ΔIB can be expressed as AQn, with n = 0.5 for our devices. Except for large values of IR, A varies in a power-law fashion with IR. The dependence of ΔIB upon the forward current at which the device is operating can be expressed as A = BJγC. It is observed that n is characteristic of all devices and stress currents, B is constant for a given device size, and γ varies with device size and reverse current.
|Number of pages||4|
|State||Published - 1 Dec 1988|