Hot-carrier effects in polysilicon emitter bipolar transistors.

David Burnett*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

The degradation of self-aligned, polysilicon emitter transistors is described for a wide range of constant current stress on several device sizes. The experimental results indicate that ΔIB can be expressed as AQn, with n = 0.5 for our devices. Except for large values of IR, A varies in a power-law fashion with IR. The dependence of ΔIB upon the forward current at which the device is operating can be expressed as A = BJγC. It is observed that n is characteristic of all devices and stress currents, B is constant for a given device size, and γ varies with device size and reverse current.

Original languageEnglish
Pages95-98
Number of pages4
StatePublished - 1 Dec 1988

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