Hot carrier degradation in novel strained-Si nMOSFETs

M. F. Lu*, Sinclair Chiang, Alex Liu, S. Huang-Lu, M. S. Yeh, J. R. Hwang, T. H. Tang, W. T. Shiau, M. C. Chen, Ta-Hui Wang

*Corresponding author for this work

Research output: Contribution to journalConference article

13 Scopus citations

Abstract

High Id-sat enhancement is benefited from novel strained-Si process. However, it might cause reliability problems. Here we revealed the HCI degradation of strained-Si devices, which also can be correlated to Ib/Id, were worse than conventional bulk Si devices. Besides, it had high positive temperature coefficient in low voltages. Thus, it would be even worse at the operation voltage.

Original languageEnglish
Article number1315295
Pages (from-to)18-22
Number of pages5
JournalIEEE International Reliability Physics Symposium Proceedings
DOIs
StatePublished - 12 Jul 2004
Event42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States
Duration: 25 Apr 200429 Apr 2004

Keywords

  • Hot carrier degradation
  • Short channel
  • Strained-Si

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    Lu, M. F., Chiang, S., Liu, A., Huang-Lu, S., Yeh, M. S., Hwang, J. R., Tang, T. H., Shiau, W. T., Chen, M. C., & Wang, T-H. (2004). Hot carrier degradation in novel strained-Si nMOSFETs. IEEE International Reliability Physics Symposium Proceedings, 18-22. [1315295]. https://doi.org/10.1109/RELPHY.2004.1315295