High Id-sat enhancement is benefited from novel strained-Si process. However, it might cause reliability problems. Here we revealed the HCI degradation of strained-Si devices, which also can be correlated to Ib/Id, were worse than conventional bulk Si devices. Besides, it had high positive temperature coefficient in low voltages. Thus, it would be even worse at the operation voltage.
|Number of pages||5|
|Journal||IEEE International Reliability Physics Symposium Proceedings|
|State||Published - 12 Jul 2004|
|Event||42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States|
Duration: 25 Apr 2004 → 29 Apr 2004
- Hot carrier degradation
- Short channel